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Most of us have used a self-service, multi-user kiosk at some point in our lives, to purchase train tickets, to select our burger at a fast food restaurant, to pay for parking in a multi-story car park, to check-in at a hospital or airport to name just a few.

The question is, will COVID-19, or possibly some future virus strain make people reluctant about using these now necessary machines

The Hero XPulse 210 will make its much-awaited debut today at EICMA. However, it was just yesterday when the official teasers of the motorcycle surfaced on social media, showing the audience what to expect with the new model. The XPulse 210,

This Metasploit module exploits a stack overflow in the FutureSoft TFTP Server 2000 product. By sending an overly long transfer-mode string, we were able to overwrite both the SEH and the saved EIP. A subsequent write-exception that will occur allows the transferring of execution to our shellcode via the overwritten SEH. This Metasploit module has been tested against Windows 2000 Professional and for some reason does not seem to work against Windows 2000 Server (could not trigger the overflow at all).

A method of transferring data using a Trivial File Transport Protocol (TFTP) includes sending first request packet from client to server, first request packet requesting that first file be transferred; transferring first file according to first request packet if first acknowledgement packet is received at client from server indicating that server can accommodate request of first request packet; sending second request packet from client to the server if transfer of first file does not complete successfully, the second request packet including TFTP option indicating that transfer of first file be retried beginning at first block after final block that was successfully transferred in response to first request packet; and retrying transfer of first file according to second request packet if second acknowledgement packet is received at client from server indicating that server can accommodate request of second request packet.

The present invention relates to a liquid crystal display (LCD) device. More particularly, the present invention relates to an LCD device including a thin film transistor (TFT) compensation circuit in an LCD device which implements a driving circuit by using an oxide TFT, the LCD device capable of compensating for degraded characteristics of a TFT due to threshold voltage shift. As the compensation circuit including a dummy TFT is formed on a non-active area of the LC panel, the degree of threshold voltage shift of the DT due to a DC voltage can be sensed. Based on the sensed result, a threshold voltage of a second TFT can be compensated. This can reduce lowering of a device characteristic.

According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

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