Celestial AI Acquires Rockley Photonics Patent Portfolio, Strengthening Photonic Fabric IP
SANTA CLARA, Calif., Oct. 22, 2024 — Celestial AI today announced the acquisition of silicon photonics intellectual property from Rockley Photonics, including worldwide issued and pending patents. The combination of Celestial […]
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IonQ and NKT Photonics Collaborate on Next-Gen Laser Tech for Quantum Data Centers
COLLEGE PARK, Md., Nov. 8, 2024 — IonQ, a leader in the quantum computing industry, has announced a partnership with NKT Photonics, a subsidiary of Hamamatsu Photonics, to procure next-generation laser […]
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2020 Photonics North (PN) [electronic journal].
2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM) [electronic journal].
Tensile strained semiconductor photon emission and detection devices and integrated photonics system
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
PACKAGING OPTOELECTRONIC COMPONENTS AND CMOS CIRCUITRY USING SILICON-ON-INSULATOR SUBSTRATES FOR PHOTONICS APPLICATIONS
Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.
UTEP Professor Named Fellow of International Society for Optics and Photonics
Raymond C. Rumpf, Ph.D., professor of electrical and computer engineering at The University of Texas at El Paso, was promoted to Fellow of the International Society for Optics and Photonics (SPIE), an educational nonprofit established to advance light-based science, engineering and technology.